PART |
Description |
Maker |
IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 60 V, 0.023 ohm, N-CHANNE 81 A, 60 V, 0.012 ohm, N-CHANNE 27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. VISHAY INTERTECHNOLOGY INC
|
PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
IRFN9140SMD IRFN9140SMDR4 |
P-CHANNEL POWER MOSFET 14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, SMD1, 3 PIN ER 06 20 P/C 14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET
|
International Rectifier SEME-LAB[Seme LAB] TT electronics Semelab, Ltd. SEMELAB LTD
|
PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
|
IRF[International Rectifier]
|
MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N1 |
6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. MOTOROLA INC
|
IRF840 IRF820 IRFE430-JQR-B IRF741 IRFE210-JQR-BE4 |
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 1.8 A, 200 V, 1.725 ohm, Si, POWER, MOSFET 1.2 A, 400 V, 4.15 ohm, N-CHANNEL, Si, POWER, MOSFET 3.1 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
SEMELAB LTD
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
AP15P10GJ-HF AP15P10GH-HF AP15P10GH-HF-14 AP15P10G |
15 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 15 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
|
Advanced Power Electronics, Corp. Advanced Power Electronics Corp. Advanced Power Electron...
|
IRFL110TR IRFL110 |
1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 100V Single N-channel HexFET Power MOSFET in a SOT-223 Package
|
IR
|
SFP9520 SFP9520NL |
100V P-Channel A-FET / Substitute of IRF9520 6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Advanced Power MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
|